to-247 d 3 pak characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 14a) zero gate voltage drain current (v ds = 400v, v gs = 0v) zero gate voltage drain current (v ds = 320v v dss , v gs = 0v, t c =125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5634 rev a 2-2006 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms ana volts min typ max 400 27 0.16 250 1000 100 24 apt4016b_svfr(g) 400 27 108 3040 280 2.24 -55 to 150 300 2730 1210 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage to-247 or surface mount d 3 pak fast recovery body diode caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com bvfr svfr fredfet power mos v ? g d s apt4016bvfr apt4016svfr APT4016BVFRG* apt4016svfrg* * g denotes rohs compliant, pb free terminal finish. 400v 27a 0.16 ?? ?? ? downloaded from: http:///
dynamic characteristics apt4016b_svfr(g) 050-5634 rev a 2-2006 source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -27a) peak diode recovery dv / dt 5 reverse recovery time(i s = -27a, di / dt = 100a/s) reverse recovery charge(i s = -27a, di / dt = 100a/s) peak recovery current(i s = -27a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 200v i d = 27a @ 25c v gs = 15v v dd = 200v i d = 27a @ 25c r g = 1.6 ? min typ max 3350 510200 135 2460 11 10 48 6 unit pf nc ns min typ max 27 108 1.3 15 t j = 25c 250 t j = 125c 450 t j = 25c 1.8 t j = 125c 6.0 t j = 25c 14 t j = 125c 24 thermal characteristics symbol r jc r ja min typ max 0.45 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 3.32mh, r g = 25 ? , peak i l = 27a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ] di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.50.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) apt4016b_svfr(g) 050-5634 rev a 10-2005 typical performance curves i d = 0.5 i d [cont.] v gs = 10v v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c v gs =6v, 7v, 10v & 15v 5.5v 4.5v 5v 4v 5.5v 4.5v 5v 4v v gs =15v 6v v gs =10v v gs =7v 0 40 80 120 160 200 0 2 4 6 8 10 02468 02 04 06 08 01 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 5040 30 20 10 0 2.01.8 1.6 1.4 1.2 1.0 0.8 1.151.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 5040 30 20 10 0 5040 30 20 10 0 3024 18 12 60 2.52.0 1.5 1.0 0.5 0.0 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt4016b_svfr(g) 050-5634 rev a 10-2005 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. t c =+25c t j =+150c single pulse i d = i d [cont.] operation here limited by r ds (on) c rss c oss c iss v ds =200v v ds =320v v ds =80v t j =+150c t j =+25c 10s1ms 10ms 100ms dc 100s 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 1 5 10 50 100 400 .01 .1 1 10 50 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2.0 150100 5010 51 .5.1 2016 12 84 0 10,000 5,0001,000 500100 200 100 5010 51 .5.1 to - 247 (bvfr) package outline d 3 pak (svfr) package outline e1 sac: tin, silver, copper e3 100% sn downloaded from: http:///
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